DETECTION THEORY OF ION CYCLOTRON RESONANCE PHENOMENAAMANO C.1980; INTERNATION. J. MASS SPECTROM. ION PHYS.; NLD; DA. 1980; VOL. 35; NO 1-2; PP. 47-57; BIBL. 20 REF.Article

THEORETICAL SIGNAL-TO NOISE RATIO AND RESOLUTION IN ION-CYCLOTRON-RESONANCE SPECTROSCOPYAMANO C.1982; BULL. CHEM. SOC. JPN.; ISSN 0009-2673; JPN; DA. 1982; VOL. 55; NO 5; PP. 1425-1430; BIBL. 25 REF.Article

La Division du Canon et la théorie mathématique des intervalles musicauxAMANO, C.Historia Scientiarum. International Journal of the History of Science Society of Japan anc Japanese Studies in the History of Science Tokyo. 1982, Num 22, pp 97-115Article

ESR OF HOT IONS: NI(I) COMPLEX IONS PRODUCED IN RIGID SOLUTIONS BY UV-EXPOSURE.AMANO C; FUJIWARA S.1976; BULL. CHEM. SOC. JAP.; JAP.; DA. 1976; VOL. 49; NO 7; PP. 1817-1819; BIBL. 4 REF.Article

EMISSION CURRENT REGULATOR FOR ION CYCLOTRON RESONANCE SPECTROMETERS USING AN OPTICAL COUPLER. II.AMANO C; INOVE M.1978; REV. SCI. INSTRUM.; U.S.A.; DA. 1978; VOL. 49; NO 2; PP. 208-211; BIBL. 3 REF.Article

ESR OF HOT IONS: LOW SPIN PT(III) COMPLEX IONS PRODUCED BY GAMMA -IRRADIATION.AMANO C; FUJIWARA S.1977; BULL. CHEM. SOC. JAP.; JAP.; DA. 1977; VOL. 50; NO 6; PP. 1437-1440; BIBL. 12 REF.Article

All-optical bit-pattern matching with photonic switching arraysMATSUO, S; KUROKAWA, T; TSUDA, H et al.IEEE photonics technology letters. 1992, Vol 4, Num 3, pp 267-269Article

Antenna effect of human bodies towards electromagnetic waves in space. IIAMANO, C; FUJIWARA, S.Analytical sciences. 1991, Vol 7, Num 1, pp 173-175, issn 0910-6340Article

20.2% efficiency Al_0.4Ga_0.6As/GaAs tandem solar cells grown by molecular beam epitaxyAMANO, C; SUGIURA, H; YAMAMOTO, A et al.Applied physics letters. 1987, Vol 51, Num 24, pp 1998-2000, issn 0003-6951Article

SIMPLE WIDEBAND FREQUENCY-SWEPT MARGINAL OSCILLATOR DETECTOR FOR ION CYCLOTRON RESONANCE SPECTROMETERSAMANO C; GOTO Y; INOUE M et al.1979; INTERNATION. J. MASS SPECTROM. ION PHYS.; NLD; DA. 1979; VOL. 32; NO 1; PP. 67-76; BIBL. 15 REF.Article

MOVPE growth of InGaAsP/InP-based vertical-cavity structures for wafer-fused VCSELsAMANO, C; ITOH, Y; OHISO, Y et al.Journal of crystal growth. 1998, Vol 187, Num 1, pp 35-41, issn 0022-0248Article

Carbon doping and etching effects of CBr₄ during metalorganic chemical vapor deposition of GaAs and AlAsTATENO, K; KOHAMA, Y; AMANO, C et al.Journal of crystal growth. 1997, Vol 172, Num 1-2, pp 5-12, issn 0022-0248Article

Mass analysis of silver-carbon mixed cluster ions produced by fast atom bombardmentAMANO, C; ISHIGAKI, H.Analytical sciences. 1994, Vol 10, Num 1, pp 39-42, issn 0910-6340Conference Paper

Effects of substrate temperature on GaAs tunneling diodes grown by molecular beam epitaxyKATSUMOTO, S; AMANO, C.Journal of applied physics. 1988, Vol 63, Num 4, pp 1238-1240, issn 0021-8979Article

⁶⁰Co γ-ray and electron irradiation damage of GaAs single crystals and solar cellsYAMAGUCHI, M; AMANO, C.Journal of applied physics. 1983, Vol 54, Num 9, pp 5021-5029, issn 0021-8979Article

Zn-doped AlInAs grown at high temperature by metalorganic chemical vapor depositionTATENO, K; AMANO, C.Journal of crystal growth. 2000, Vol 220, Num 4, pp 393-400, issn 0022-0248Article

Characteristics of the GaInP burying layers grown by metalorganic chemical vapor deposition on mesa-patterned GaAs substratesTATENO, K; UENOHARA, H; KAGAWA, T et al.Journal of crystal growth. 2000, Vol 209, Num 4, pp 605-613, issn 0022-0248Article

Growth temperature dependence of the interfacet migration in chemical beam epitaxy of InP on non-planar substratesAMANO, C; RUDRA, A; GRUNBERG, P et al.Journal of crystal growth. 1996, Vol 164, Num 1-4, pp 321-326, issn 0022-0248Conference Paper

Using carbon tetrachloride for carbon doping Al_XGa_1-XAs grown by metalorganic chemical vapor depositionKOHAMA, Y; AMANO, C; OHISO, Y et al.Japanese journal of applied physics. 1995, Vol 34, Num 7A, pp 3504-3505, issn 0021-4922, 1Article

High-efficiency Al_0.3Ga_0.7As solar cells grown by molecular beam epitaxyAMANO, C; SUGIURA, H; ANDO, K et al.Applied physics letters. 1987, Vol 51, Num 14, pp 1075-1077, issn 0003-6951Article

Influence of growth conditions on deep levels in molecular-beam-epitaxial GaAsAMANO, C; SHIBUKAWA, A; ANDO, K et al.Electronics Letters. 1984, Vol 20, Num 4, pp 174-175, issn 0013-5194Article

Stepwise change in the resonance frequency of water-alcohol mixtures, suggesting a rearrangement of the solution structureTAKEI, T; AMANO, C; NISHIMOTO, Y et al.Analytical sciences. 1997, Vol 13, Num 6, pp 1043-1045, issn 0910-6340Article

Switchable-logic photonic switch array monolithically integrating MSM's, FET's, and MQW modulatorsNAKAHARA, T; MATSUO, S; AMANO, C et al.IEEE photonics technology letters. 1995, Vol 7, Num 1, pp 53-55, issn 1041-1135Article

20 dB contrast GaAs/AlGaAs multiple quantum-well nonresonant modulatorsAMANO, C; MATSUO, S; KUROKAWA, T et al.IEEE photonics technology letters. 1992, Vol 4, Num 1, pp 31-33Article

Photonic memory switch consisting of multiple quantum well reflection modulator and heterojunction phototransistorMATSUO, S; AMANO, C; KUROKAWA, T et al.Applied physics letters. 1992, Vol 60, Num 13, pp 1547-1549, issn 0003-6951Article